公开(公告)号：WO2023018769A1

公开(公告)日：2023-02-16

申请号：PCT/US2022/039915

申请日：2022-08-10

Applicant: IDEAL POWER INC.

Inventor： BU, Jiankang ,  BULUCEA, Constantin ,  MOJAB, Alireza ,  KNAPP, Jeffrey ,  BRDAR, Robert Daniel

IPC: H01L29/732 ,  H03K17/60

Abstract: Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.