公开(公告)号：WO2022020707A1

公开(公告)日：2022-01-27

申请号：PCT/US2021/042951

申请日：2021-07-23

Applicant: LAM RESEARCH CORPORATION

Inventor： PIOUX, Gabriel ,  RONNE, Allan

IPC: H01L21/67 ,  H01J37/32

Abstract: A semiconductor processing chamber performs various wafer processing operations that involve at least one of pumping the chamber to high vacuum states and regulating a vacuum (e.g., during introduction of process gases, as gas infiltrates the chamber, as reactions emit gases, as a wafer off-gases, etc.). A vacuum valve may be fluidically coupled between a vacuum pumping system and at least a portion of the semiconductor processing chamber. The vacuum valve may be a high-conductance multi-stage poppet valve enabling a relatively high gas flow rate and/or low pressure drop. In an open state, the multi-stage design of the poppet valve may have larger cross-sectional openings, in aggregate, than a comparable single-stage poppet valve could achieve, thereby increasing conductance.

公开(公告)号：WO2022015512A1

公开(公告)日：2022-01-20

申请号：PCT/US2021/039981

申请日：2021-06-30

Applicant: LAM RESEARCH CORPORATION

Inventor： HAN, Hui Ling ,  KINSLER, Michael Julius ,  MADSEN, Steven James ,  PIOUX, Gabriel

IPC: H01J37/32

Abstract: In some examples, a double seal arrangement for a substrate processing chamber comprises a radially inner barrier seal disposed within a barrier seal gland. The barrier seal gland includes an inner toe and an outer toe. A radially outer vacuum seal is disposed within a vacuum seal gland. The vacuum seal gland includes at least an inner toe. A first venting pathway is provided between the inner toe of the vacuum seal gland and the outer toe of the barrier seal gland, and a second venting pathway is provided between the outer toe of the barrier seal gland and the inner toe of the barrier seal gland. A third venting pathway is in communication at least with the inner toe of the barrier seal gland, and a vacuum source connected to at least one of the first, second, and third venting pathways.