公开(公告)号：WO2021011923A1

公开(公告)日：2021-01-21

申请号：PCT/US2020/042666

申请日：2020-07-17

Applicant: MENTIUM TECHNOLOGIES INC.

Inventor： BAYAT, Farnood, Merrikh ,  SULIMA, Jaroslaw ,  PREZIOSO, Mirko

IPC: G11C7/04 ,  G11C7/12 ,  G11C11/417

Abstract: A memory system having a temperature effect compensation mechanism is provided. The memory system memory cells in an array having rows of memory cells arranged horizontally and columns arranged vertically. The memory cells have an operating temperature range. The memory system also includes a temperature-dependent biasing circuit that reduces a biasing voltage to the memory cells when the temperature of the array is at or near an upper end of the operating temperature range and increases the biasing voltage when the temperature of the array is at or near a lower end of the operating temperature range. Also provided are comparators for submicron processes, analog-to-digital converters for non-volatile memory arrays used for in-memory computation with floating bitlines, and methods and structures for programming non-volatile memory arrays with automatic programming pulse amplitude adjustment using current-limiting circuits.