公开(公告)号：WO2021133159A1

公开(公告)日：2021-07-01

申请号：PCT/MY2020/050133

申请日：2020-11-05

Applicant: MIMOS BERHAD

Inventor： LEE, Mai Woon ,  LEE, Hing Wah ,  SORIADI, Nurhidaya ,  ADOM, Abdul Halim

IPC: H01L21/205 ,  C01B32/186

Abstract: The present invention relates to a method (100) of forming graphene nanomesh comprising the steps of providing an oxide layer on top of the substrate (101) as an insulating layer, depositing a metal seed layer on a substrate (102) via physical vapor deposition technique; and growing a graphene layer on the metal seed layer (103) via chemical vapor deposition, whereby said graphene layer grows into the graphene nanomesh on the metal seed layer. The method (100) further comprising a step of transferring the graphene nanomesh to another substrate (104).