公开(公告)号：WO2020139077A1

公开(公告)日：2020-07-02

申请号：PCT/MY2019/050132

申请日：2019-12-26

Applicant: MIMOS BERHAD

Inventor： LEE, Hing Wah ,  LEE, Mai Woon ,  BIN MOHAMMAD HANIFF, Muhammad Aniq Shazni ,  BINTI SORIADI, Nurhidaya ,  BIN ADOM, Abdul Halim

IPC: H01L21/02

Abstract: The present invention relates to a method (200) of forming graphene bump structure (100) comprising the steps of providing (210) a substrate (10); etching (220) the substrate (10) to form a cavity structure (20); growing (230) a silicon dioxide layer (30) on top of the substrate (10); depositing (240) a thin metal catalyst layer (40) on top of the substrate (30); synthesizing (250) graphene layer (50) on top of the metal catalyst layer (40); depositing (260) an epoxy-based photoresist (60); removing (270) the thin metal catalyst layer (40), the silicon dioxide layer (30) and the epoxy-based photoresist (60) from the substrate (10); and patterning (280) the epoxy-based photoresist (60) to remove from the cavity structure (20) to form the graphene bump structure (100).