公开(公告)号：WO1997024794A2

公开(公告)日：1997-07-10

申请号：PCT/IB1996001358

申请日：1996-12-05

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  JANASWAMY, Anand ,  JAYARAMAN, Rajsekhar ,  AMATO, Michael ,  VELDMAN, Paul

IPC: H02M03/24

CPC classification number: H03F3/2171 ,  H02M7/003 ,  H02M7/538 ,  H03K17/063 ,  H03K2017/6875

Abstract: A half-bridge driver circuit including a lower drive module and a floating upper drive module for driving respective external upper and lower power transistors of a high voltage half bridge is contained in an integrated circuit chip which includes an on-chip bootstrap diode emulator which is turned on in response to a control signal applied to its gate in order to pass current from a power supply to charge an external bootstrap capacitor that powers the upper drive module. The upper drive module is accommodated in an insulated well and the diode emulator includes as its main current carrying element, a JFET transistor formed along the periphery of the well. The JFET transistor is driven into a conducting state at the same time the lower power transistor is driven into a conducting state. The source electrode of the JFET is coupled to the power supply via a diode, such that the voltage at said source electrode cannot rise above a level which is one diode drop below the voltage at said power supply output and control circuitry derives the control signal in a manner that it is constrained not to rise a level which is three diode drops below the voltage at the power supply output and limits the current that may flow in the gate electrode.

Abstract translation: 包括用于驱动高电压半桥的各个外部上下功率晶体管的下驱动模块和浮动上驱动模块的半桥驱动电路包含在集成电路芯片中，该集成电路芯片包括片上自举二极管仿真器 响应于施加到其栅极的控制信号而导通，以便从电源传递电流以对为上驱动模块供电的外部自举电容器充电。 上驱动模块容纳在绝缘井中，二极管仿真器包括作为其主载流元件的沿着阱周边形成的JFET晶体管。 JFET晶体管被驱动成导通状态，同时低功率晶体管被驱动到导通状态。 JFET的源电极通过二极管耦合到电源，使得所述源电极处的电压不能升高到低于所述电源输出处的电压的一个二极管的电平，并且控制电路将控制信号导出 限制其不会上升三个二极管的电平低于电源输出处的电压并限制可能在栅电极中流动的电流的方式。