公开(公告)号：WO2018231330A1

公开(公告)日：2018-12-20

申请号：PCT/US2018/026187

申请日：2018-04-05

Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE

Inventor： AZIZ, Michael Joseph ,  MAZUR, Eric ,  GANDHI, Hemant Hirsch ,  PASTOR, David

IPC: H01L31/103 ,  H01L31/0216 ,  H01L31/0288

CPC classification number: H01L31/02161 ,  H01L31/0288 ,  H01L31/103

Abstract: In one aspect, a photodetector is disclosed, which comprises a germanium substrate having a doped layer configured for exposure to external radiation and having a thickness in a range of about 10 nm to about 1 micron. The doped layer includes at least one deep-level dopant distributed therein such that a concentration of the dopant in the doped layer is at least about 10 16 atoms/cm 3 . The doped layer forms a diode junction with an underlying portion of the germanium substrate.

公开(公告)号：WO2016077587A3

公开(公告)日：2016-05-19

申请号：PCT/US2015/060385

申请日：2015-11-12

Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE

Inventor： MAZUR, Eric ,  FRANTA, Benjamin ,  AZIZ, Michael, J. ,  PASTOR, David

IPC: H01L21/04 ,  H01L31/102

Abstract: In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so as to generate a doped polyphase surface layer on a light-trapping surface, and optically annealing the surface layer via exposure to a plurality of laser pulses having a pulsewidth in a range of about 1 nanosecond to about 50 nanoseconds so as to enhance crystallinity of said doped surface layer while maintaining high above-bandgap, and in many embodiments sub-bandgap optical absorptance.