公开(公告)号：WO2021102224A1

公开(公告)日：2021-05-27

申请号：PCT/US2020/061436

申请日：2020-11-20

Applicant: RAYTHEON BBN TECHNOLOGIES, CORP.

Inventor： SOLTANI, Moe ,  KAZIOR, Thomas

IPC: G02B6/12 ,  G02B2006/12142 ,  G02B6/12002 ,  G02F1/0154 ,  G02F1/0551 ,  G02F1/0553 ,  G02F2201/063 ,  G02F2201/58 ,  G02F2202/108 ,  G02F2203/58

Abstract: A photonic integrated circuit comprises a silicon nitride waveguide (110), an electro-optic modulator formed of a Ill-nitride waveguide structure (105) disposed on the silicon nitride waveguide (110), a dielectric cladding (135) covering the silicon nitride waveguide(110) and electro-optic modulator, and electrical contacts (140) disposed on the dielectric cladding (135) and arranged to apply an electric field to the electro-optic modulator.