公开(公告)号：WO2013177519A1

公开(公告)日：2013-11-28

申请号：PCT/US2013/042653

申请日：2013-05-24

Applicant: RAYTHEON COMPANY

Inventor： SMITH, Irl, W. ,  DORSCHNER, Terry, A. ,  KIRCHNER, Amanda, J. ,  COLLINS, Steven, R. ,  RESLER, Daniel, P. ,  PALMACCIO, Linda, A.

IPC: G02F1/1343 ,  G02F1/1334 ,  G02F1/1333 ,  G02F1/29 ,  G02B6/42

CPC classification number: G02F1/1334 ,  G02B6/2821 ,  G02B6/4204 ,  G02B6/4286 ,  G02F1/133365 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/292 ,  G02F2001/133302 ,  G02F2001/13345 ,  G02F2001/13775 ,  G02F2202/10

Abstract: A transmissive liquid crystal (LC) control structure comprising: a superstrate (44) having a first surface (44a) having a GaN HEMT structure disposed thereon to provide a conductor on the first surface of said superstrate; a substrate (42) having a first surface disposed over and spaced apart from the first surface of said superstrate and having a GaN HEMT structure (43) disposed thereon to provide a conductor on the first surface of said substrate and wherein the GaN HEMT structure on one of the superstrate and substrate surfaces are patterned into individual electrodes; a polymer network liquid crystal (PNLC) (48) disposed in the space between the first surface of said superstrate and the first surface of said substrate; and a control circuit coupled to the individual electrodes.

Abstract translation: 一种透射型液晶（LC）控制结构，包括：具有设置在其上的GaN HEMT结构的第一表面（44a）的上层（44），以在所述覆层的第一表面上提供导体; 衬底（42），其具有设置在所述衬底的第一表面上并与之隔开的第一表面，并且具有设置在其上的GaN HEMT结构（43），以在所述衬底的第一表面上提供导体，并且其中GaN HEMT结构在 一个覆盖层和衬底表面被图案化成单独的电极; 设置在所述覆盖层的第一表面和所述基板的第一表面之间的空间中的聚合物网络液晶（PNLC）（48） 以及耦合到各个电极的控制电路。