公开(公告)号：WO2004047148A3

公开(公告)日：2004-06-03

申请号：PCT/US2003/036669

申请日：2003-11-17

Applicant: REDWOOD MICROSYSTEMS, INC.

Inventor： HARRIS, James, M. ,  PATEL, Sapna

IPC: H01L21/00

Abstract: A method for producing a corrosion-resistant channel in a wetted path of a silicon device enables such device to be used with corrosive compounds, such as fluorine. A wetted path of a MEMS device is coated (210) with either an organic compound resistant to attack by atomic fluorine or a material capable of being passivated by atomic fluorine. The device is then exposed to a gas that decomposes into active fluorine compounds (220) when activated by a plasma discharge. One example of such a gas is CF 4 , an inert gas that is easier and safer to work with than volatile gases like CIF 3 . The gas will passivate the material (if applicable) and corrode any exposed silicon. The device is tested (230) in such a manner that any unacceptable corrosion of the wetted path will cause the device to fail. If the device operates properly, the wetted path is deemed to be resistant to corrosion by fluorine or other corrosive compounds, as applicable.