公开(公告)号：WO2022110097A1

公开(公告)日：2022-06-02

申请号：PCT/CN2020/132599

申请日：2020-11-30

Applicant: SUZHOU XPECTSENSE TECHNOLOGY CO., LTD.

Inventor： CAO, Peiyan ,  LIU, Yurun

IPC: G01T1/36

Abstract: Disclosed herein is an image sensor comprising: a plurality of avalanche photodiodes (APDs); wherein each of the APDs comprises a radiation absorption layer that comprises an absorption region and an amplification region; wherein the absorption region is configured to generate charge carriers therein from a particle of radiation absorbed by the radiation absorption layer; wherein the absorption region comprises an InGaAs layer sandwiched between InP layers; wherein the amplification region has an electric field therein, the electric field having a field strength sufficient to cause an avalanche of the charge carriers in the amplification region.

公开(公告)号：WO2022110097A8

公开(公告)日：2022-06-02

申请号：PCT/CN2020/132599

申请日：2020-11-30

Applicant: SUZHOU XPECTSENSE TECHNOLOGY CO., LTD.

Inventor： CAO, Peiyan ,  LIU, Yurun

IPC: G01T1/36

Abstract: Disclosed herein is an image sensor comprising: a plurality of avalanche photodiodes (APDs); wherein each of the APDs comprises a radiation absorption layer that comprises an absorption region and an amplification region; wherein the absorption region is configured to generate charge carriers therein from a particle of radiation absorbed by the radiation absorption layer; wherein the absorption region comprises an InGaAs layer sandwiched between InP layers; wherein the amplification region has an electric field therein, the electric field having a field strength sufficient to cause an avalanche of the charge carriers in the amplification region.