Abstract:
Disclosed is a process for leaching selected metal compounds (e.g. gallium arsenide) from integrated circuits containing those compounds. The method includes placing the integrated circuits into a culture medium containing bacteria. Bacteria capable of leaching the metal compounds from the integrated circuits leach metals from the integrated circuits. The bacteria preferably used will be ATCC 53921 and mutations and recombinants thereof. The integrated circuits are generally crushed to between 20 and-400 mesh before placement into the culture medium containing bacteria.
Abstract:
A high temperature process for leaching selected metal compounds, such as gallium or germanium, from ores containing those selected metal compounds is disclosed. The method generally includes contacting metal-containing ores with an admixture of nutrient medium and bacteria capable of leaching selected metal compounds contained in the ore. Preferably, bacteria designated as ATCC 53921 are used in the method. The ore is typically crushed prior to contacting it with the admixture, and the process is carried out at between 62 DEG C and 75 DEG C and at a pH of between 1.0 and 2.5. The method presents a novel process for recovering valuable metals from ores which are otherwise difficult or impossible to recover. Metals which are particularly recoverable using the present method are germanium, gallium and mixtures thereof.