CURRENT-SENSING MOSFETS IN PARALLELED MOSFET POWER CIRCUIT
    1.
    发明申请
    CURRENT-SENSING MOSFETS IN PARALLELED MOSFET POWER CIRCUIT 审中-公开
    并联MOSFET功率电路中的电流感应MOSFET

    公开(公告)号:WO1998031092A1

    公开(公告)日:1998-07-16

    申请号:PCT/US1997022884

    申请日:1997-12-12

    Abstract: Six sets of parallel-connected MOSFETs (e.g., 42-46) are gated to provide a 3-phase (26, 28, 30) output. At least one of the MOSFETs (48, 64, 66) in each of three sets of the six sets has a separately metallized current-sensing pad. The output from this pad represents the phase current. When phase current reaches a maximum permissible level, this signal controls the MOSFET gates to limit current.

    Abstract translation: 六组并联MOSFET(例如42-46)被选通以提供三相(26,28,30)输出。 六组中的三组中的每一组中的至少一个MOSFET(48,64,66)具有单独的金属化电流感测垫。 该焊盘的输出表示相电流。 当相电流达到最大允许电平时,该信号控制MOSFET栅极限制电流。

Patent Agency Ranking