公开(公告)号：WO2022178023A1

公开(公告)日：2022-08-25

申请号：PCT/US2022/016644

申请日：2022-02-16

Applicant: WOLFSPEED, INC.

Inventor： LICHTENWALNER, Daniel Jenner ,  VAN BRUNT, Edward Robert ,  HARRINGTON, III, Thomas E. ,  SABRI, Shadi ,  HULL, Brett ,  MCPHERSON, Brice ,  MCPHERSON, Joe W.

IPC: H01L23/482 ,  H01L23/00 ,  H01L29/423 ,  H01L29/78

Abstract: Strategic placement and patterning of electrodes, vias, and metal runners can significantly reduce strain in a power semiconductor die. By modifying the path defining electrodes, vias, and metal runners, as well as patterning the material layers thereof, strain can be better managed to increase reliability of a power semiconductor die.