公开(公告)号：WO2023089337A1

公开(公告)日：2023-05-25

申请号：PCT/GB2022/052945

申请日：2022-11-21

Applicant: SOFANT TECHNOLOGIES LTD

Inventor： CHRISTIE, Andrew ,  HARIDAS, Nakul ,  FULLER, Matt ,  STEEL, Victor ,  WITHER, David

IPC: H05K1/02 ,  H05K1/14 ,  B81B7/00 ,  H01Q21/00 ,  H01Q1/22 ,  H01Q3/32 ,  H05K3/28 ,  H05K3/46

Abstract: 51 Abstract1 2 The present invention provides a circuit board assembly, for a microelectromechanical 3 system, MEMS, based antenna assembly, comprising: first and second PCBs, each 4 having an RF signal conductor and one or more ground conductors thereon; an RF 5 signal connector extending between the first and second PCBs and electrically 6 connected to the RF signal conductors of the first and second PCB; and one or more 7 ground connectors extending between the first and second PCBs and electrically 8 connected to the ground conductors of the first and second PCBs, wherein the one or 9 more ground connectors are arranged to at least partially surround the RF signal 10 connector, wherein the RF signal connector and the one or more ground connectors 11 are provided in a connector assembly extending between the first and second PCBs 12 and defining one or more openings therein, each opening adjacent to at least one of 13 the first PCB and the second PCB, wherein the circuit board assembly further 14 comprises a plurality of signal connectors extending between the first and second 15 PCBs and arranged around a periphery of the one or more openings, wherein the first 16 PCB comprises a circuit component extending from a surface of the first PCB, towards 17 the second PCB, and wherein the connector assembly is arranged such that at least 18 one of the one or more openings accommodates the circuit component therein.19

公开(公告)号：WO2023082005A1

公开(公告)日：2023-05-19

申请号：PCT/CA2022/051661

申请日：2022-11-10

Applicant: THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO

Inventor： VON DER ECKEN, Sebastian ,  WHEELER, Aaron R. ,  CHAMBERLAIN, Michael Dean ,  SKLAVOUNOS, Alexandros

IPC: B81B1/00 ,  B81B7/04 ,  H01L23/48 ,  H01L31/08 ,  H05K1/16

Abstract: A microfluidics device comprises a cover mounted to an addressing structure. The cover has a working surface on one side, and a plurality of electrodes on its other side. The electrodes may be used for manipulation of fluid droplets on the working surface. The electrodes are connected to a voltage source by way of the addressing structure to selectively apply voltage to individual ones of the plurality of electrodes.

公开(公告)号：WO2023072541A1

公开(公告)日：2023-05-04

申请号：PCT/EP2022/077670

申请日：2022-10-05

Applicant: ROBERT BOSCH GMBH

Inventor： REINMUTH, Jochen

IPC: G01C19/5712 ,  B81B3/00

Abstract: Die Erfindung betrifft ein mikromechanisches Bauteil für einen Drehratensensor mit einem ersten Rotor (12a), welcher auf einer ersten Seite mit ersten seismischen Masse (16a) und auf einer zweiten Seite mit einer zweiten seismischen Masse (16b) ausgebildet ist, wobei das mikromechanisches Bauteil zusätzlich aufweist: ein erstes Hebelelement (20), dessen erstes Ende auf der ersten Seite über eine erste Hebelanbindungsfeder (22a) an der ersten seismischen Masse (16a) angebunden ist, und welches sich von seinem ersten Ende zu seinem zweiten Ende auf einer zwischen der ersten Seite und der zweiten Seite liegenden dritten Seite des ersten Rotors (12a) erstreckt, ein zweites Hebelelement (20b), dessen erstes Ende auf der zweiten Seite über eine zweite Hebelanbindungsfeder (22b) an der zweiten seismischen Masse (16b) angebunden ist, und welches sich von seinem ersten Ende zu seinem zweiten Ende auf der dritten Seite des ersten Rotors (12a) erstreckt; und eine erste Hebelelementfeder (24a), über welche das erste Hebelelement (20a) und das zweite Hebelelement (20b) miteinander verbunden sind.

公开(公告)号：WO2023070214A1

公开(公告)日：2023-05-04

申请号：PCT/CA2022/051591

申请日：2022-10-26

Applicant: STATHERA IP HOLDINGS INC.

Inventor： DARUWALLA, Anosh ,  MATHEW, Reuble

IPC: B81B3/00 ,  B81B7/02 ,  H03H9/24 ,  H03H9/125

Abstract: An example silicon MEMS resonator device includes a support structure, a resonator element with at least one associated eigenmode of vibration, at least one anchor coupling the resonator element to the support structure, at least one driving electrode, and at least one sense electrode. The resonator element is homogeneously doped with N-type or P-type dopants to a doping concentration that causes a closely temperature-compensated mode in which (i) an absolute value of a first order temperature coefficient of frequency of the resonator clement is reduced to a first value below a threshold value and (ii) an absolute value of a second order temperature coefficient of frequency of the resonator element is reduced to about zero. Further, a geometry of the resonator element is chosen such that the absolute value of the first order temperature coefficient of frequency is further reduced to a second value smaller than the first value.

公开(公告)号：WO2023015382A1

公开(公告)日：2023-02-16

申请号：PCT/CA2022/051211

申请日：2022-08-09

Applicant: VUEREAL INC.

Inventor： CHAJI, Gholamreza

IPC: H01L21/98 ,  B81B7/02 ,  H01L21/66 ,  H01L27/14 ,  H01L27/15 ,  H01L51/50

Abstract: The invention disclose method to selectively transfer microdevices from a cartridge substrate to a system substrate by bringing a cartridge substrate closer to the system substrate, wherein the release layer for the first selected microdevice from the cartridge substrate is modified or removed prior to the transfer such that the selected microdevice is held to the cartridge substrate with a lower force than the bonding force of the selected microdevice to the pad.

公开(公告)号：WO2023014606A1

公开(公告)日：2023-02-09

申请号：PCT/US2022/038861

申请日：2022-07-29

Applicant: INVENSENSE, INC.

Inventor： LEE, Daesung ,  CUTHBERTSON, Alan

IPC: B81B7/02 ,  B81B7/00 ,  B81C1/00

Abstract: A device includes a substrate comprising a first standoff, a second standoff, a third standoff, a first cavity, a second cavity, and a bonding material covering a portion of the first, the second, and the third standoff. The first cavity is positioned between the first and the second standoffs, and the second cavity is positioned between the second and the third standoffs. The first cavity comprises a first cavity region and a second cavity region separated by a portion of the substrate extruding thereto, and wherein a depth associated with the first cavity region is greater than a depth associated with the second cavity. A surface of the first cavity is covered with a getter material.

公开(公告)号：WO2023014599A1

公开(公告)日：2023-02-09

申请号：PCT/US2022/038835

申请日：2022-07-29

Applicant: INVENSENSE, INC.

Inventor： LEE, Daesung ,  CUTHBERTSON, Alan

IPC: B81B3/00

Abstract: A method includes forming a bumpstop from a first intermetal dielectric (IMD) layer and forming a via within the first IMD, wherein the first IMD is disposed over a first polysilicon layer, and wherein the first polysilicon layer is disposed over another IMD layer that is disposed over a substrate. The method further includes depositing a second polysilicon layer over the bumpstop and further over the via to connect to the first polysilicon layer. A standoff is formed over a first portion of the second polysilicon layer, and wherein a second portion of the second polysilicon layer is exposed. The method includes depositing a bond layer over the standoff.

公开(公告)号：WO2023283448A2

公开(公告)日：2023-01-12

申请号：PCT/US2022/036558

申请日：2022-07-08

Applicant: FRORE SYSTEMS INC.

Inventor： MUKUNDAN, Vikram ,  GANTI, Suryaprakash ,  MADHAVAPEDDY, Seshagiri, Rao ,  YALAMARTHY, Ananth, Saran ,  KAPA, Prathima

IPC: B81B7/00 ,  H05K7/20

Abstract: A cooling system is described. The cooling system includes a bottom plate, a support structure, and a cooling element. The bottom plate has orifices therein. The cooling element has a central axis and is supported by the support structure at the central axis. A first portion of the cooling element is on a first side of the central axis and a second portion of the cooling element is on a second side of the central axis opposite to the first side. The first and second portions of the cooling element are unpinned. The first portion and the second portion are configured to undergo vibrational motion when actuated to drive a fluid toward a heat-generating structure. The support structure couples the cooling element to the bottom plate. At least one of the support structure is an adhesive support structure or the support structure undergoes rotational motion in response to the vibrational motion. The adhesive support structure has at least one lateral dimension defined by a trench in the cooling element or the bottom plate.

公开(公告)号：WO2022271852A1

公开(公告)日：2022-12-29

申请号：PCT/US2022/034558

申请日：2022-06-22

Applicant: UNIVERSITY OF WASHINGTON

Inventor： ZHANG, Bo ,  ANDERSON, Todd ,  MCALLISTER, Chris

IPC: B81C1/00 ,  B81B7/00

Abstract: An ultrathin free-standing solid state membrane, including an etched well on a glass wafer, and a layer of SiX deposited on a backside of the etched well on the glass wafer.

公开(公告)号：WO2022246686A1

公开(公告)日：2022-12-01

申请号：PCT/CN2021/096034

申请日：2021-05-26

Applicant: 京东方科技集团股份有限公司 ,  北京京东方技术开发有限公司

Inventor： 郭景文 ,  曲峰

IPC: B81B7/02 ,  H01P1/18

Abstract: 本公开提供一种移相器及天线，属于通信技术领域。本公开的移相器，其包括：衬底基板，信号电极、第一参考电极和第二参考电极，均设置在衬底基板上，且第一参考电极和第二参考电极分设在信号电极长度方向的两侧；层间绝缘层，设置在信号电极所在层背离衬底基板的一侧；至少一个相控单元，至少一个相控单元中的每个包括设置在层间绝缘层背离衬底基板一侧的膜桥；信号电极的至少部分位于衬底基板与膜桥所围成的空间中，且膜桥的两端分别与第一参考电极和第二参考电极在衬底基板上的正投影存在交叠；其中，膜桥划分为第一锚点区、第二锚点区，以及位于第一锚点区和第二锚点区之间的功能区；膜桥具有位于功能区的镂空图案。