A manufacturing method of storing charge component can control the thickness of film pullulation and property of content of silicon precisely, during the cause of aggradation of silicon oxide hafnium HfxSiyOz, the content of silicon can be changed gradually, so the gradual material layer can be produced easily. Then, content of silicon can affect the etch ofsilicon oxide hafnium HfxSiyOz by hydrofluoric acid solution, using the property can make gradual material layer irregular. Because the lower electrode, capacitance dielectric layer, upper electrode are in side wall which possesses irregular figure gradual change insulated layer, so area between the lower electrode and the upper electrode can be added to increase the storage of the storing charge component.