The present invention provides a cleaning method for removing photoresist residues, including: providing a semiconductor device, on which is deposited with an auxiliary layer for assisting to completethe lithography step, as well as a photoresist layer on the auxiliary layer; a first chemical cleaning step; a rinse with deionized water; a second chemical cleaning step; a rinse with deionized water; and a drying step. The present inventive first cleaning step can remove most of the photoresist and the macromolecular layer; followed by using the rinse with deionized water to remove a photoresist surface layer 'has been rinsed', thereby avoiding the photoresist surface layer to adhere to the device again; then using the second cleaning step to remove all remained photoresist, a small amountof the photoresist surface layer and the macromolecular layer adhered back again; the present inventive cleaning process can effectively remove photoresist residues to stop the problems such as the image congestion the yield decline caused by the photoresist residue; and it will not cause any side effects to the dual-inlaid process.