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发明公开
CN101064362A 场效应晶体管及其制造方法 失效 - 权利终止

场效应晶体管及其制造方法
摘要：
本发明提供一种具有使沟道传导的载流子的移动度比以前的有机TFT大的值的TFT制造方法。场效应晶体管的制造方法的特征是，在衬底上设置形成图形的栅电极，在上述衬底上和上述栅电极上设置栅绝缘膜，在上述栅绝缘膜上分开设置源电极和漏电极，在上述源电极和上述漏电极之间设置应成为沟道的区域，该区域与上述源电极或上述漏电极中的任一方的边界线是直线状，上述该区域和上述漏电极或上述源电极中的另一方的边界线是非直线状，而且，该边界线是连续或不连续的形状，该边界部分有多个凹部，准备上述该区域表面有亲水性、上述该区域的周围区域具有疏水性的构件，向上述该区域供给含有半导体有机分子的溶液，并干燥上述溶液。
摘要（英）：

A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.

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