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发明公开
CN101106153A 场效应晶体管、有机薄膜晶体管及有机晶体管的制造方法 无效 - 撤回

场效应晶体管、有机薄膜晶体管及有机晶体管的制造方法
摘要：
本发明的目的是提供在有机TFT中，对电子注入效率和空穴注入效率得以改善的电极和有机半导体组合分别进行判别的方法，实现n型沟道FET和p型沟道FET两种FET，进而提供互补型TFT(CTFT)晶体管。为此，推导出通常从电极和有机半导体构成元素的物理常数推导出电极金属－有机半导体界面中真空能级位移Δ的方法。通过电化学手段使电极金属变化，制成可以控制电子注入和空穴注入的电极。通过这些电极来实现n型沟道FET和p型沟道FET两种FET，进而，提供了互补型TFT(CTFT)晶体管。
摘要（英）：

A method for determining the combination of the electrode and organic semiconductor with improved electron injection efficiency and hole injection efficiency in an organic TFT is provided, two types of FETs, that is, an n channel FET and a p channel FET are realized, and further, a complementary TFT (CTFT) is provided. The method for obtaining the vacuum level shift at the electrode metal/organic semiconductor interface from physical constants of constituent elements of the electrode and the organic semiconductor is provided. By changing the electrode metal through an electrochemical method, the electrodes whose electron injection and hole injection can be controlled are formed. By using these electrodes, two types of FETs such as an n channel FET and a p channel FET are realized, thereby providing a complementary TFT (CTFT).

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