The invention discloses a high-speed deposition method on a P/I interface of a microcrystal silicon solar battery, which comprises controlling glowing power and silicane concentration by ultra-high frequency plasma enhanced chemical vapor deposition method and depositing a first intrinsic microcrystal silicon film layer on a P player with a first deposition rate; adjusting glowing power and silicane concentration without extinguishment of plasma glow and growing a second intrinsic microcrystal silicon film layer on the first intrinsic microcrystal silicon film layer with a second deposition rate, wherein the first deposition rate is smaller than the second deposition rate. The invention uses lower glower power and lower silicane concentration to depose on P layer with smaller deposition rate to obtain high crystallized intrinsic microcrystal silicon film layer with low defect, so as to improve battery efficiency.