利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN101192513A 金属－绝缘体－金属电容器及其制造方法 无效 - 驳回

金属－绝缘体－金属电容器及其制造方法
摘要：
本发明公开了一种金属－绝缘体－金属电容器的制造方法，包括：在绝缘层上形成第一金属层；在所述第一金属层上形成第一电介质层；在所述第一电介质层上形成第二电介质层；在所述第二电介质层中形成沟槽；在所述沟槽中形成第二金属层；平坦化所述第二金属层和所述第二电介质层直至露出所述第二电介质层的表面。本发明还相应公开了一种金属－绝缘体－金属电容器，包括：在绝缘层上形成的下电极板；在所述下电极板上形成的电介质层；在所述电介质层上形成的上电极板；在所述上电极板的两侧具有形成于上电极板之前的金属间介电层。本发明的金属－绝缘体－金属电容器及其制造方法，能够避免冠状刻蚀缺陷的出现。
摘要（英）：

The invention discloses a method for manufacturing a metal-insulator-metallic capacitor. The method includes the following steps: a first metallic layer is generated on an insulating layer; a first dielectric layer is generated on the first metallic layer; a second dielectric layer is generated on the first dielectric layer; a groove is generated in the second dielectric layer; a second metallic layer is generated in the groove; the second metallic layer and the second dielectric layer are processes by planarization till the surface of the second dielectric layer is exposed. The invention also accordingly discloses a metal-insulator-metallic capacitor, which includes a lower electrode plate generated on the insulating layer, the dielectric layer generated on the lower electrode plate, an upper electrode plate generated on the dielectric layer and the dielectric layer between metals generated before the upper electrode plate and on two sides of the upper electrode plate. The metal-insulator-metallic capacitor and the manufacturing method of the invention can avoid an appearance of defect with coronal etching.

0/0