The invention relates to an electrically evoked resistor material which is used for the intrinsic of a resistance-typed memory and dopes with a strontium titanate film and a preparation method thereof, and provides the material with the intrinsic of the transition characteristic of an electrically evoked resistor and doping with strontium titanate SrAxTi1-xO3 and a preparation technology, wherein, A refers to In, Ga, Mn, Sb or Ta, and the value of atomic percentage x ranges from 1 percent to 40 percent. The preparation method includes three steps: a preparation method of metal or a bottom electrode of a conductive semiconductor (such as Pt, Ir, TiN, and SrRuO3, etc.), a preparation method of the intrinsic, and a preparation method of a resistive transition film doping with strontium titanate and a metal top electrode. In different experimental conditions, the strontium titanate films of quasi monocrystalline, polycrystalline and incomplete crystallization phase are obtained, and have excellent and stable performance of high-and-low resistance state conversion and memory characteristic on the occasion of continuous voltage scanning stimulation, when materials such as Pt, Ir, Ag, Al, Ti or Mo, etc. are used as the material of the top electrode.