The invention provides an integrated circuit based on an SOI silicon chip, a method for monolithically integrating a capacitor type micro-silicon microphone and a chip. An SOI substrate is provided with a first area and a second area. A device layer of the SOI substrate positioned on the second area is taken as one electrode of the capacitor. Firstly, the integrated circuit is generated on the device layer of the first area; secondly, the device layer of the second area adopts the low temperature technique below 400 DEG C to generate a sacrificial layer, a conductive membrane is formed on the sacrificial layer by the low temperature technique; and finally, etching solution is fed to partially erode the sacrificial layer from a gas vent and the capacitor type micro-silicon microphone is formed, and the conductive membrane is taken as the other electrode of the capacitor, thereby reducing the size of the chip, lowering the manufacturing cost, avoiding adopting the high temperature technique to reduce the stress of the device layer taken as a vibrating membrane, and avoiding adopting the complex vibrating membrane with complicated technique and the poor repetitiveness to reduce the stress.