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发明授权
CN101373798B 倒装双结铟镓氮太阳能电池结构 失效 - 权利终止

倒装双结铟镓氮太阳能电池结构
摘要：
一种倒装双结铟镓氮太阳能电池结构，包括：一衬底；一氮化镓成核层制作在衬底的上面；一非有意掺杂氮化镓缓冲层制作在氮化镓成核层的上面；一n型掺杂InaGa1-aN层制作在非有意掺杂氮化镓缓冲层的上面；一p型掺杂InaGa1-a N层制作在n型掺杂InaGa1-a N层的上面；一p型重掺杂InbGa1-b N层制作在p型掺杂InaGa1-a N层的上面；一n型重掺杂InbGa1-b N层制作在p型重掺杂InbGa1-b N层的上面；一n型掺杂IncGa1-c N层制作在n型重掺杂InbGa1-b N层的上面；一p型掺杂IncGa1-c N层制作在n型掺杂IncGa1-c N层的上面。
摘要（英）：

The invention relates to a flip-chip double-junction indium gallium nitride solar battery structure which comprises a substrate, a gallium nitride nucleating layer produced on the substrate, an unintentional doped gallium nitride buffer layer produced on the gallium nitride nucleating layer, an n-type doped InaGa<1 minus a>N layer produced on the unintentional doped gallium nitride buffer layer, a p-type doped InaGa<1 minus a>N layer produced on the n-type doped InaGa<1 minus a>N layer, a p-type heavily doped InbGa<1 minus b>N layer produced on the p-type doped InaGa<1 minus a>N layer, an n-type heavily doped InbGa<1 minus b>N layer produced on the p-type heavily doped InbGa<1 minus b>N layer, an n-type doped IncGa<1 minus c>N layer produced on the n-type heavily doped InbGa<1 minus b>N layer, and a p-type doped IncGa<1 minus c>N produced on the n-type doped IncGa<1 minus c>N layer.

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