A memory element stores information by using molecular orientation in the liquid crystal state of a liquid crystal compound by selectively heat-treating a conductive liquid crystal semiconductor material layer including the liquid crystal compound by applying laser beam on spot. The memory element is provided with a first electrode group composed of a plurality of parallel linear electrodes; the conductive liquid crystal semiconductor material layer, which is formed to cover the first electrode group, including a liquid crystal compound having a long linear conjugate structural section with a smectic phase as a liquid crystal phase; and a second electrode group composed of a plurality of parallel linear transparent electrodes extending in a direction intersecting with the electrodes of the first electrode group on the conductive liquid crystal semiconductor material layer.