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发明公开
CN101477951A 一种增强型AlGaN/GaN场效应管及其制作方法 有权

一种增强型AlGaN/GaN场效应管及其制作方法
摘要：
本发明涉及一种增强型AlGaN/GaN场效应管的制作方法，即采用二次生长AlGaN层来制作增强型AlGaN/GaN HFET的方法，其包括以下步骤：(1)在衬底上先生长一层缓冲层，并在其上方生长一层GaN外延层；(2)在GaN外延层上生长第一AlGaN层，完成第一次材料生长；(3)在第一AlGaN层上淀积一层SiO2掩蔽膜，通过光刻的方法，保留形成栅极区域之上的SiO2掩蔽膜；(4)在未被掩蔽的第一AlGaN层上二次生长第二AlGaN层，完成第二次材料生长；(5)去除SiO2掩蔽膜；(6)在第二AlGaN层上形成源极和漏极，再在栅极区域上形成栅极。另外，本发明还公开了一种增强型AlGaN/GaN场效应管。本发明工艺简单，可靠性好，可以获得较高的阈值电压和跨导。
摘要（英）：

The invention relates to a method for manufacturing an enhanced type AlGaN/GaN/ field effect transistor, namely a method for manufacturing AlGaN/GaN HFET by adopting a secondary growth AlGaN layer. The method comprises the following steps: firstly, a buffer layer grows on a substrate firstly, and a GaN epitaxial layer grows on the buffer layer; secondly, a first AlGaN layer grows on the GaN epitaxial layer to accomplish the first material growth; thirdly, a SiO2 mask membrane is deposited on the first AlGaN layer, and the SiO2 mask membrane formed on a grid zone is reserved through the photoetching method; fourthly, a second AlGaN layer grows on the unmasked first AlGaN layer to accomplish the second material growth; fifthly, the SiO2 mask membrane is removed; sixthly, a source electrode and a drain electrode are formed on the second AlGaN layer, and then a grid electrode is formed on the grid zone. Moreover, the invention also discloses the enhanced type AlGaN/GaN/ field effect transistor. The method has the advantages of simple process and good reliability, and can obtain higher threshold voltage and transconductance.

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