A method of self-aligned silicon nitride overlying for the borderless contact hole of copper technology, comprising: forming patterns in the sacrificial layer (22) of substrate (21) via etching, and then filling with metal copper; removing the sacrificial layer after chemical mechanical polishing, and forming the copper stud (23); depositing inter-metal dielectric layers (24,25,26,27,28); defining the etching region, etching said inter-metal dielectric layers (24,25,26,27,28), and forming the borderless contact hole. The method of self-aligned silicon nitride overlying is applied to the borderless contact hole of copper technology, solves the problem of the piling out of copper along the silicon nitride cap, the low-k material and micro trenches when the silicon nitride covering is opened. For the aligned contact hole, the point of stress above the metal copper stud is far from the corner of the bottom end of the contact hole, availing of peeling off interface and solving the problem of the resistivity of the interface; considering the misaligned contact hole, the etching stop layer which is adjacent to the metal forms the overlying layer, so as to prevent the etching through the low-k material.