The invention discloses a chalcopyrite type semiconductor thin-film heterojunction solar cell based on P-shaped silicon, which comprises an illuminated surface electrode, a transparent conductive layer, an N-shaped chalcopyrite semiconductor thin film, a P-shaped crystalline silicon, a P+ back surface field and a back metal electrode which are stacked and combined in sequence and form an NPP+ heterojunction structure. The solar cell has better spectral response, in particular in an ultraviolet band and a visible light band, thereby promoting short circuit current; a gradient band gap can be formed on the front surface of the solar cell, which is similar to the effect of multijunction stack, so that the open-circuit voltage and the fill factor are increased greatly; and finally, over 19 percent of conversion efficiency of the solar cell is obtained.