The invention provides an integrated circuit chip and a method for manufacturing the integrated circuit chip. The integrated circuit chip comprises a semi-conductor substrate including a cutting lateral wall which is substantially perpendicular to the semi-conductor substrate, and without metal interconnection structure. The integrated circuit chip further includes a circuit device formed in the semiconductor substrate, and a conductive pattern formed in the semiconductor substrate and exposed from the cutting lateral wall, wherein the conductive pattern includes at least one kind of doped silicon and a metal oxide. A doped silicon pattern (diffusion region) is used as the interconnect pattern in the cut tunnel. Namely, no metal interconnection lines exist in the cutting tunnel, thereby entire reliability, quality and process efficiency can be effectively enhanced for the integrated circuit device.