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发明公开
CN101717990A 高纯多晶硅棒作为供料棒在单晶硅区域熔炼法中的应用以及制备方法 无效 - 驳回

高纯多晶硅棒作为供料棒在单晶硅区域熔炼法中的应用以及制备方法
摘要：
本发明涉及高纯多晶硅棒作为供料棒在单晶硅区域熔炼法中的应用以及制备方法。该高纯硅棒采用纯度在99.9999％-99.9999999999％的硅粉经过等静压方法压制成直径为20mm-300mm的硅棒，原料硅棒所采用的硅粉原料的颗粒直径在0.1微米-100微米，该原料硅棒的密度为1.60-2.29克/立方厘米，该原料硅棒的抗压参数为0.1-50MPa，该原料硅棒的纯度在99.999％-99.9999999999％，该原料硅棒密度均匀，密度均匀表现在该硅块的任意截面上的任意两点的密度相差幅度在0-18％，该高纯多晶硅棒有良好抗压性能，可以直接作为区域熔炼法单晶硅的供料棒使用。
摘要（英）：

The invention relates to application of a high-purity polysilicon rod as a feed rod in a monocrystalline silicon zone melting method and a preparation method thereof. The high-purity silicon rod is pressed into a silicon rod with the diameter of 20-300mm by silicon powder with the purity of 99.9999-99.9999999999 percent through an isostatic pressing method, and the particle diameter of a silicon powder raw material adopted by the raw material silicon rod is between 0.1 microns and 100 microns; the density of the raw material silicon rod is 1.60-2.29g/cubic centimeter, the compression resistant parameter of the raw material silicon rod is between 0.1MPa and 50MPa, and the purity of the raw material silicon rod is between 99.999 percent and 99.9999999999 percent; the raw material silicon rod has even density which is expressed in 0-18 percent of density difference amplitude of any two points on any section of the silicon block; and the high-purity polysilicon rod has favorable compression resistance and can be directly used as the feed rod of the monocrystalline silicon of the zone melting method.

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