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CN101728274A 通过共注入碳和氮降低多晶硅耗尽 无效 - 驳回 复审申请

通过共注入碳和氮降低多晶硅耗尽
摘要：
本发明涉及通过共注入碳和氮降低多晶硅耗尽。一种形成半导体结构的方法，该方法包括：提供半导体衬底；在该半导体衬底上形成栅电介质层；在该栅电介质层上形成栅电极层；将碳和氮掺杂进该栅电极层；以及在掺杂碳和氮的步骤之后，图案化该栅电介质层和该栅电极层，以分别形成栅电介质和栅电极。
摘要（英）：

A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer over the semiconductor substrate; forming a gate electrode layer over the gate dielectric layer; doping carbon and nitrogen into the gate electrode layer; and, after the step of doping carbon and nitrogen, patterning the gate dielectric layer and the gate electrode layer to form a gate dielectric and a gate electrode, respectively.

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