Disclosed is a semiconductor device wherein semiconductor elements are formed at a higher density. Also disclosed are a method for manufacturing such a semiconductor device and an image display using such a semiconductor device. Specifically disclosed is a semiconductor device characterized by comprising a resin film having a through hole penetrating the film from one side to the other side, a source electrode formed along the inner wall of the through hole, a drain electrode formed along the inner wall of the through hole, a gate electrode so formed on the other side of the resin film as to face the through hole, an insulating layer formed on the gate electrode and lying at the bottom of the through hole, and an organic semiconductor arranged within the through hole in contact with the source electrode and the drain electrode. This semiconductor device is further characterized in that the organic semiconductor is in contact with at least a part of the insulating layer at the bottom of the through hole, and a channel is formed in the organic semiconductor at a position near the insulating layer in contact therewith.