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发明授权
CN101882571B III族氮化物半导体晶体、III族氮化物半导体器件以及发光器件 失效 - 权利终止

III族氮化物半导体晶体、III族氮化物半导体器件以及发光器件
摘要：
本发明提供其尺寸适于半导体器件的III族氮化物半导体晶体及其有效的制造方法、III族氮化物半导体器件及其有效的制造方法、以及发光设备。制造III族氮化物半导体晶体的方法包括在开始衬底上生长至少一个III族氮化物半导体晶体的步骤、在III族氮化物半导体晶体衬底上生长至少一个III族氮化物半导体晶体层的步骤、以及从所述开始衬底分离由III族氮化物半导体晶体衬底和III族氮化物半导体晶体层所构成的III族氮化物半导体晶体的步骤，并且其特征在于所述III族氮化物半导体晶体的厚度是10μm或以上但是600μm或以下，以及宽度是0.2mm或以上但是50mm或以下。
摘要（英）：

A III nitride semiconductor crystal having sizes of approximately a semiconductor device and a manufacturing method thereof, a III nitride semiconductor device and a manufacturing method thereof and a light emitting device. The method for manufacturing the III nitride semiconductor crystal includes a process of growing one or more of a III nitride semiconductor crystalline board (11) on a base board (1), a process of growing one layer or more layers of a III nitride semiconductor crystalline layer (12) on the III nitride semiconductor crystalline board (11), and a process of separating a III nitride semiconductor crystal (10) composed of the III nitride semiconductor crystalline board (11) and the III nitride semiconductor crystalline layer (12) from the base board (1). The III nitride semiconductor crystal (10) has a thickness of 10mum or more but not more than 600mum, and a width of 0.2mm or more but not more than 50mm.

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