The invention discloses a method for reducing generation of electric arcs in the wafer processing procedure, which comprises the following steps: taking a wafer, and putting the wafer on a heating disk of a reaction chamber by utilizing a robot, wherein the radius of the wafer is greater than the radius of the heating disk; depositing a film of which the color is different from the color of the wafer on the surface of the wafer; measuring the width of the film deposited on the wafer arranged on one surface of the heating disk in at least four radial directions, wherein the four radial directions are sequentially perpendicular; and controlling the motion of the robot according to the difference of the film width in the radial directions of 180 degrees. Thus, the handoff position of the robot is adjusted according to the film forming condition on the back surface of the wafer, thereby solving the problem that the handoff position can not be adjusted easily, which puzzles the technical personnel for a long time. Meanwhile, by using the method for adjusting the handoff position, the alignment degree of the center of the wafer and the center of the heating disk can be improved, therebyreducing the generation of electric arcs and improving the yield of semiconductor products.