The invention relates to a current-limitation aperture measuring method of a non-destructive surface-emitting semiconductor laser, belonging to the technical field of semiconductor photoelectron. The measuring method can measure and observe emitting lasers of all waveband surfaces and measure various current limiting holes of the surface-emitting semiconductor laser and comprises a scale microscope which can measure lengths. The current-limitation aperture measuring method comprises the following steps of: firstly applying low current to the semiconductor laser to be measured and observing, wherein shape spots of the current limiting holes of the laser can be seen until the semiconductor laser appears weak fluorescence; and then, observing and measuring spot sizes by using the scale microscope, i.e., measuring the aperture sizes of the current limiting holes. For improving mode characteristics of a photonic crystal vertical cavity surface-emitting laser and a distributed hole laser, the measuring method can align the relative positions of etching defect holes and the current limiting holes for observing, can measure the shapes of the current limiting holes at any time and is not influenced by a wavelength range, wherein the etching defect holes are light emitting holes.