The invention discloses a high-voltage bipolar transistor. An active region is isolated by shallow trench field oxygen. The bipolar transistor comprises a collector region, a base region and an emitter region, wherein the collector region consists of a foreign ion implantation layer of first conductive type formed in the active region, a buried layer is connected to two sides of the bottom of the collector region respectively, the buried layers are formed by implanting foreign ions into the bottoms of shallow trenches on two sides of the active region, and the two buried layers on the two sides of the active region are not connected; a deep trench contact leading-out collector is manufactured in the field oxygen on the buried layers; the base region consists of an epitaxial layer of second conductive type formed on the collector, the intrinsic base region of the base region is connected with the collector region, and a metal contact leading-out base is manufactured on the outer base region of the base region; and the emitter region consists of polycrystalline silicon of first conductive type formed on the base region. The limiting direction of a depletion region of a collector base can be transferred to the transverse oblique direction from the longitudinal direction; and by increasing the width of the active region, the breakdown voltage of the device can be increased, and the production cost can be reduced.