The invention relates to an amorphous HgCdTe monolithic integrated type focal plane detector, which is characterized by comprising a readout circuit, an aluminum electrode, a lower electrode, photosensitive layers and an upper electrode, wherein the aluminum electrode is designed on the readout circuit; a groove is designed on the aluminum electrode; the metal lower electrode is deposited in the groove; the lower electrode is connected with the readout circuit through the aluminum electrode; the photosensitive layers are designed on the surfaces of the readout circuit, the aluminum electrode and the lower electrode; and the metal lower electrode is deposited on the photosensitive layers. The detector can be used for infrared wavebands and visible waveband. Experimental tests prove that the amorphous HgCdTe monolithic integrated type focal plane detector can simplify the manufacturing process of the focal plane, eliminate the material difference between a detector chip and the readout circuit and avoid generating stress or strain between the detector chip and the readout circuit so that the reliability of the monolithic integrated type focal plane detector is greatly improved and the detector has higher external quantum efficiency.