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发明公开
CN102162968A 量子阱偏移光放大器和电吸收调制器的制作方法 失效 - 权利终止

量子阱偏移光放大器和电吸收调制器的制作方法
摘要：
一种量子阱偏移光放大器和电吸收调制器的制作方法，包括：在n型InP衬底上外延生长n型InP缓冲层、电吸收调制器下限制层、电吸收调制器多量子阱、电吸收调制器上限制层和本征InP注入缓冲层；生长SiO2保护层；形成放大器区和电吸收调制器区；腐蚀掉电吸收调制器区的SiO2保护层，在本征InP注入缓冲层上生长SiO2层；快速热退火；腐蚀掉SiO2层；在电吸收调制器上限制层上依次生长n型InP光限制因子调整层、放大器下限制层、放大器多量子阱和放大器上限制层；腐蚀掉电吸收调制器区的放大器上限制层、放大器多量子阱、放大器下限制层和n型InP光限制因子调整层；在放大器区和电吸收调制器区上生长p型InP包层和p型InGaAs电极接触层，完成器件的制作。
摘要（英）：

A fabrication method of a quantum well offset optical amplifier and an electro-absorption modulator comprises the following steps: epitaxially growing an n-type InP buffer layer, an electro-absorption modulator lower confinement layer, electro-absorption modulator multiple quantum wells, an electro-absorption modulator upper confinement layer and an intrinsic InP injection buffer layer on an n-type InP substrate; growing a SiO2 protection layer; forming an amplifier area and an electro-absorption modulator area; etching off the SiO2 protection layer in the electro-absorption modulator area and growing a SiO2 layer on the intrinsic InP injection buffer layer; rapidly performing thermal annealing; etching off the SiO2 layer; sequentially growing an n-type InP optical confinement factor adjusting layer, an amplifier lower confinement layer, amplifier multiple quantum wells, and an amplifier upper confinement layer on the electro-absorption modulator upper confinement layer; etching off the amplifier upper confinement layer, the amplifier multiple quantum wells, the amplifier lower confinement layer and the n-type InP optical confinement factor adjusting layer in the electro-absorption modulator area; and growing a p-type InP cladding layer and a p-type InGaAs electrode contact layer on the amplifier area and the electro-absorption modulator area to finish the fabrication of the device.

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