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发明公开
CN102176471A 一种绒面结构BZO/HGZO复合薄膜及应用 失效 - 权利终止

一种绒面结构BZO/HGZO复合薄膜及应用
摘要：
一种绒面结构BZO/HGZO复合薄膜，具有玻璃/绒面结构BZO/高电导率HGZO结构，其中BZO为B掺杂ZnO；HGZO为H化Ga掺杂ZnO；其制备方法是利用MOCVD技术和磁控溅射技术相结合生长高迁移率绒面结构BZO/高电导率HGZO薄膜；该复合薄膜可应用于pin型μc-Si薄膜太阳电池和a-Si/μc-Si叠层薄膜太阳电池。本发明的优点：MOCVD技术获得的BZO薄膜具有绒面结构，同时在较低B掺杂情况下有效地降低了自由载流子浓度，提高了薄膜电子迁移率，减少了对i近红外区域的吸收；磁控溅射技术生长高电导并且具有高电子迁移率的HGZO薄膜，降低了对太阳光谱中近红外区域的吸收。
摘要（英）：

The invention discloses a textured structural ZnO:B (BZO)/ZnO:Ga/H (HGZO) composite thin film, which has a glass/textured structural BZO/high-conductivity HGZO structure, wherein BZO is B-doped ZnO; and HGZO is Ga/H-doped ZnO. In a preparation method for the thin film, the high-mobility textured structural BZO/high-conductivity HGZO thin film is grown by combining a metal organic chemical vapor deposition (MOCVD) technology and a magnetron sputtering technology. The composite thin film can be applied to a pin-type mu c-Si thin film solar cell and an a-Si/mu c-Si laminated thin film solar cell. The textured structural BZO/HGZO composite thin film has the advantages that: the BZO thin film obtained by the MOCVD technology has a textured structure, simultaneously free carrier concentration is effectively reduced under the condition of relatively lower B doping, the electron mobility of the thin film is improved and the absorption of an i near infrared area is reduced; and the HGZO thin film with high conductivity and high electron mobility is grown by the magnetron sputtering technology, and the absorption of the near infrared area in solar spectrum is reduced.

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