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发明公开
CN102181826A 镓钼共掺杂铟锡氧化物陶瓷靶、透明导电薄膜及制备方法 失效 - 权利终止

  • 专利标题： 镓钼共掺杂铟锡氧化物陶瓷靶、透明导电薄膜及制备方法
  • 专利标题（英）： Gallium-molybdenum-codoped indium tin oxide ceramic target, gallium-molybdenum-codoped indium tin oxide transparent conductive film and preparation method
  • 申请号： CN201110075427.4
    申请日： 2011-03-28
  • 公开(公告)号： CN102181826A
    公开(公告)日： 2011-09-14
  • 发明人: 何军辉 , 刘振华 , 刘拥军
  • 申请人： 扬州大学
  • 申请人地址： 江苏省扬州市大学南路88号
  • 专利权人： 扬州大学
  • 当前专利权人： 扬州大学
  • 当前专利权人地址： 江苏省扬州市大学南路88号
  • 代理机构： 扬州苏中专利事务所
  • 代理商 许必元
  • 主分类号： C23C14/08
  • IPC分类号： C23C14/08 ;  C23C14/28 ;  C23C14/34 ;  C04B35/01 ;  C04B35/622
镓钼共掺杂铟锡氧化物陶瓷靶、透明导电薄膜及制备方法
摘要：
本发明公开了镓钼共掺杂铟锡氧化物陶瓷靶、透明导电薄膜及制备方法。将In2O3、SnO2、Ga2O3、MoO3粉体和无水乙醇混合经球磨、预合成、再球磨、造粒、成型、烧结、退火，制得镓钼共掺杂铟锡氧化物InSnGaMo陶瓷靶；将镓钼共掺杂铟锡氧化物(InSnGaMo)陶瓷靶材置于脉冲激光沉积装置中沉积，制得镓钼共掺杂铟锡氧化物(InSnGaMo)透明导电薄膜。本发明制备工艺简单，生产制造容易，可重复性性好，降低了生产成本。InSnGaMo陶瓷靶材具有价格较低，相对密度较高，电阻率更低的特性。InSnGaMo透明导电薄膜具有在高温下结构稳定且具有极低的电阻率(＜10-4Ω·cm)和高的透光率(＞90％)，具有优良的电学和光学特性；同时具有良好的弱酸刻蚀性能。在透明电子学和新型光电器件领域具有广泛的应用前景。
摘要（英）：

The invention discloses a gallium-molybdenum-codoped indium tin oxide ceramic target, a gallium-molybdenum-codoped indium tin oxide transparent conductive film and a preparation method. The gallium-molybdenum-codoped indium tin oxide (InSnGaMo) ceramic target is prepared as follows: mixing In2O3 powder, SnO2 powder, Ga2O3 powder and absolute ethyl alcohol, ball milling, pre-combining, ball milling again, pelleting, forming, sintering and annealing; and the gallium-molybdenum-codoped indium tin oxide (InSnGaMo) transparent conductive film is prepared as follows: arranging the gallium-molybdenum-codoped indium tin oxide (InSnGaMo) ceramic target in a pulse laser deposition device for deposition. In the invention, the preparation process is simple, the production is easy, the repeatability is good, and the production cost is lowered. The InSnGaMo ceramic target has the advantages of lower cost, higher relative density, and lower resistivity. The InSnGaMo transparent conductive film has a stable structure under high temperature, extremely low resistivity (less than 10-4Omega cm) and high light transmittance (more than 90%), good electrical and optical properties, and simultaneously has good weak acid corrosion property. The invention has wide application prospect in the transparent electronics field and novel photoelectric device field.

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