A dielectric ceramic composition comprises: a compound having perovskite type crystal structure shown by a general formula ABO3; as subcomponents, with respect to 100 moles of said compound, 1.0 to 2.5 moles of an oxide of RA in terms of RA2O3, where RA is at least one selected from the group consisting of Dy, Gd and Tb; 0.2 to 1.0 mole of an oxide of RB in terms of RB2O3, where RB is at least one selected from the group consisting of Ho and Y; 0.1 to 1.0 mole of an oxide of RC in terms of RC2O3, where RC is at least one selected from the group consisting of Yb and Lu; 0.8 to 2.0 moles of an oxide of Mg in terms of Mg; and 1.2 to 3.0 moles of an oxide including Si in terms of Si, wherein when contents of said oxide of RA, said oxide of RB and said oxide of RC with respect to 100 moles of said compound are defined as '[alpha]', '[beta]' and '[gamma]', respectively, said '[alpha]', '[beta]' and '[gamma]' satisfy relations of 2.5<=([alpha]/[beta])<=5.0 and 1.0<=([beta]/[gamma])<=10.0. The dielectric ceramic composition preferably uses an electronic component with a dielectric layer in a thickness of said dielectric layer being 5.0 [mu]m or less. The present invention relates to a dielectric ceramic composition and a ceramic electronic component having good characteristics, even when the dielectric layer is made thinner.