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发明授权
CN102222633B 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法 有权

热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法
摘要：
本发明提供通过拉伸张力芯片接合薄膜恰当地断裂的热固型芯片接合薄膜。一种热固型芯片接合薄膜，用于以下方法：对半导体晶片照射激光形成改性区域后，通过用改性区域将半导体晶片断裂而由半导体晶片得到半导体元件的方法；或者在半导体晶片的表面形成未到达背面的沟后，进行半导体晶片的背面磨削，通过从背面露出沟而由半导体晶片得到半导体元件的方法，所述热固型芯片接合薄膜的特征在于，热固化前25℃下的断裂伸长率大于40％且不超过500％。本发明还提供切割/芯片接合薄膜及半导体装置的制造方法。
摘要（英）：

The present invention provides a thermosetting type die bond film that can be preferably broken by tensile force. It is a thermosetting type die bond film used for a method of obtaining a semiconductor element from a semiconductor wafer by forming a reforming region by irradiating the semiconductor wafer with a laser beam and then breaking the semiconductor wafer in the reforming region or a method of obtaining a semiconductor element from a semiconductor wafer by forming grooves that do not reach the backside of the semiconductor wafer on a surface thereof and then exposing the grooves from the backside by grinding the backside of the semiconductor wafer, wherein the elongation rate at break at 25° C. before thermal curing is larger than 40% and 500% or less.

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