The invention discloses a planarization method suitable for a photoetching technology. The method comprises the following steps: coating a dielectric layer on the surface of a substrate by adopting a spin coating method, wherein the dielectric layer covers a stage with the height about 20mu m for the surface of the substrate, and a planar surface is formed on the surface of the substrate; then photoetching the substrate using a photoresist with a low-viscosity coefficient again after the substrate is dried; preparing a UBM (ultrasound microscopy) layer through a wet etching technology; and finally removing the dielectric layer in the process of degumming. Through the method, the UBM layer with a salient point with lineation/ spacing 150mu m/100mu m and height 20mu m is manufactured, and the technological requirement of salient point blind print is satisfied; and the technology has good consistency, the technology process is simple, the production efficiency is high, the method is suitable for mass production, and the products meet the reliable requirement.