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发明公开
CN102479704A 制造双极晶体管的方法和双极晶体管 无效 - 撤回

制造双极晶体管的方法和双极晶体管
摘要：
公开了一种制造双极晶体管的方法，包括：提供包括有源区(22)的衬底(10)；沉积叠层；在所述叠层中在有源区上方形成基极窗口(38)；在所述基极窗口中形成至少一个柱子(40)，其中所述柱子的一部分是抗抛光的；在所得到的结构上沉积发射极材料(46)，从而填充所述基极窗口；以及通过抛光来平面化所沉积的发射极材料。还公开了一种根据该方法制造的双极晶体管。
摘要（英）：

Disclosed is a method of manufacturing a bipolar transistor, comprising providing a substrate (10) including an active region (22); depositing a layer stack; forming a base window (38) over the active region in said layer stack; forming at least one pillar (40) in the base window, wherein a part of the pillar is resistant to polishing; depositing an emitter material (46) over the resultant structure, thereby filling said base window; and planarizing the deposited emitter material by polishing. A bipolar transistor manufactured in accordance with this method is also disclosed.

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