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CN102511086A 氮化物系半导体元件及其制造方法 无效 - 撤回

氮化物系半导体元件及其制造方法
摘要：
本发明提供一种氮化物系半导体元件及其制造方法。本发明的氮化物系半导体元件具备：半导体叠层构造(20)，其具有表面(12)相对于m面倾斜了1°以上5°以下角度的p型半导体区域；和电极(30)，其设置在p型半导体区域上。p型半导体区域由AlxInyGazN(x+y+z＝1，x≥0，y≥0，z≥0)层(26)形成。电极(30)包含Zn层(32)和形成在Zn层(32)上的Ag层(34)，Zn层(32)与半导体叠层构造(20)中的p型半导体区域的表面(12)接触。
摘要（英）：

The disclosed nitride semiconductor element is provided with: a layered semiconductor structure (20) that has a p-type semiconductor region, the surface (12) of which is inclined at an angle between 1 DEG and 5 DEG with an m-plane,and an electrode (30) provided on top of the p-type semiconductor region. The p-type semiconductor region is formed from an AlxInyGazN (x+y+z = 1, x = 0, y = 0, z = 0) layer (26). The electrode (30) contains a zinc layer (32) and a silver layer (34) formed on top of the zinc layer (32). The zinc layer (32) is in contact with the surface (12) of the p-type semiconductor region in the layered semiconductor structure (20).

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