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发明公开
CN102629661A 形成掺杂相变材料的复合靶溅射 有权

形成掺杂相变材料的复合靶溅射
摘要：
本发明公开了是有关于以包括硫族化物材料的相变材料为基础的用于存储器装置的制造方法，以及使用于这类装置的用于形成掺杂硫族化物材料的方法。溅射靶材具有硅或另一半导体，或以硅为基础或其它以半导体为基础的添加物的相变材料层，使用包括硅或其它半导体以及相变材料的复合溅射靶材而形成。硅或其它半导体的浓度高于所形成的层中的硅或其它半导体的特定浓度5倍以上。对于在锗锑碲型相变材料中的以硅为基础的添加物，溅射靶材可包括超过40原子百分比的硅。以硅为基础的或其它以半导体为基础的添加物在沉积期间，在溅射腔室可使用复合溅射靶材及例如氧气或氮气的反应性气体气流而形成。
摘要（英）：

The present invention relates to manufacturing methods for memory devices based on phase change materials including chalcogenide materials, and methods for forming doped chalcogenide materials for use in such devices. A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.

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