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发明公开
CN102754160A 具有不同于感测放大器电路的页寄存器和存储器阵列下方的感测放大器接口的3D存储器装置 有权 转让

具有不同于感测放大器电路的页寄存器和存储器阵列下方的感测放大器接口的3D存储器装置
摘要：
非易失性存储装置包括：衬底，在衬底的一部分上方的非易失性存储元件的单片式三维存储器阵列，与非易失性存储元件通信的多个感测放大器，与感测放大器通信的多个临时存储装置，与临时存储装置通信的页寄存器及一个或多个控制电路。一个或多个控制电路与页寄存器、临时存储装置和感测放大器通信。感测放大器在衬底上、单片式三维存储器阵列下方。临时存储装置在衬底上、单片式三维存储器阵列下方。页寄存器在衬底上、在未处于单片式三维存储器阵列下方的区域中。响应于一个或多个控制电路，感测放大器从非易失性存储元件读出的数据被传送至临时存储装置，随后传送至页寄存器。响应于一个或多个控制电路，待编程到非易失性存储元件中的数据从页寄存器传送至临时存储装置。
摘要（英）：

A non-volatile storage device includes a substrate, a monolithic three- dimensional memory array of non-volatile storage elements arranged above a portion of the substrate, a plurality of sense amplifiers in communication with the non-volatile storage elements, a plurality of temporary storage devices in communication with the sense amplifiers, a page register in communication with the temporary storage devices, and one or more control circuits. The one or more control circuits are in communication with the page register, the temporary storage devices and the sense amplifiers. The sense amplifiers are arranged on the substrate underneath the monolithic three-dimensional memory array. The temporary storage devices are arranged on the substrate underneath the monolithic three-dimensional memory array. The page register is arranged on the substrate in an area that is not underneath the monolithic three- dimensional memory array. Data read from the non-volatile storage elements by the sense amplifiers is transferred to the temporary storage devices and then to the page register in response to the one or more control circuits. Data to be programmed into the non-volatile storage elements is transferred to the temporary storage devices from the page register in response to the one or more control circuits.

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