利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN102881697A 一种可提高TFT背板良率的布线结构 有权

一种可提高TFT背板良率的布线结构
摘要：
本发明公开了一种可提高TFT背板良率的布线结构，包括主氧化线、电源线、连接金属、行扫描线、电源线与行扫描线刻断图形、电源线接触刻蚀孔。本发明将TFT背板驱动阵列的主氧化线设计成网格状结构，电源线和行扫描线在阵列外围连接在一起，且连接至主氧化线，待阳极氧化处理后，利用刻蚀方法，将电源线、行扫描线以及主氧化线分割开，实现各自的功能。通过这种布线设计，可以大大提高TFT背板栅极金属阳极氧化效率和均匀性。待阳极氧化形成栅极绝缘层薄膜后，通过接触孔，金属Ⅱ与金属Ⅰ相互搭接，进而形成网格状的电源线结构；通过这种布线设计，可以减小背板像素阵列电源线断线造成的显示屏线缺陷，从而提高TFT背板的良率。
摘要（英）：

The invention discloses a wiring structure capable of increasing yield rate of a TFT (Thin Film Transistor) backplate, which comprises main oxide lines, power lines, connecting metal, row scanning lines, power line and row scanning line carving patterns and power line contact etching holes. The main oxide lines of a TFT backplate driving array are designed to be a latticed structure, the power lines and the row scanning lines are connected together at the outer periphery of the array and connected to the main oxide lines, and after the anodic oxidation treatment, the power lines, the row scanning lines and the main oxide lines are divided by the etching method to realize the respective functions. By the wiring design, the anodic oxidization efficiency and uniformity of the gate metal of the TFT backplate can be greatly increased. After a gate insulating thin film is formed by the anodic oxidization, the metal II and the metal I are in lap joint by the contact holes, and further, the latticed power line structure is formed; and by the wiring design, the defect of the display screen line, caused by the broken pixel array power lines of the backplate, can be reduced, and further, the yield rate of the TFT backplate can be increased.

公开/授权文献
0/0