The invention discloses a TSV three-dimensional integration interconnection structure based on an SOI. The interconnection structure comprises a barrier layer, a side wall insulation layer, and a conductive filler, wherein a copper pillar is the conductive filler; the barrier layer and the side wall insulation layer sequentially wrap the outer wall of the copper pillar; the copper pillar penetrates through a top silicon layer, a buried oxide layer and substrate silicon of the SOI longitudinally to form the TSV; the TSV above the buried oxide layer has a diameter W1; the TSV below the buried oxide layer has a diameter W2 smaller than W1, and is coaxial with the TSV above the buried oxide layer. The interconnection structure provided by the invention not only can realize three-dimensional integration of the SOI-based process device and meet the process requirement for TSV three-dimensional integration of a hardened device and a high-voltage/low-leakage device, but also can reduce the influences of Notching effect on the subsequent side wall insulation process, thereby improving breakdown voltage, enhancing reliability of an SOI-based TSV three-dimensional integration device, saving chip area, and lowering development cost.