The invention discloses an electrode structure for effectively increasing the working stability of a semiconductor LED (Light-Emitting Diode), and relates to an LED electrode structure with a reflecting layer. According to the structure, the reflecting layer plays a role of current expansion. The electrode structure is characterized in that current is injected from the side face of the reflecting layer, and therefore a certain potential gradient is formed on the contact surface of the electrode and the LED, so that the migration of metal ions in the reflecting layer due to the effect of electric field in the using process is inhibited, and the stable performance of a device is increased. Meanwhile, the electrode part as injection current can contain a material which has higher reflectivity but does not easily generate ion migration, therefore the total reflecting area is increased, and the luminous efficiency is increased.